EPHEMT Transistor Powers 0.05 to 10 GHz

Mini-Circuits’ model TAV2-14LN+ MMIC enhancement-mode, pseudomorphic high-electron-mobility- transistor (E-PHEMT) device that provides high gain and low noise figure from 50 MHz to 10 GHz. It is ideal for front ends in broadband communications receivers. At 4 V and 40 mA, typical gain is 16.4 dB at 6 GHz and 11.8 dB at 10 GHz and typical noise figure is 0.7 dB at 6 GHz and 0.8 dB at 10 GHz. Under the same drain-source voltage and current conditions, the output power at 1-dB compression (P1dB) is typically +18.8 dBm at 6 GHz while the output third-order intercept point (OIP3) is typically +30.9 dBm, also at 6 GHz. Input return loss is typically 7 dB from 6 through 10 GHz while output return loss is typically 13 dB at 6 GHz and 20 dB at 8 and 10 GHz. The MMIC transistor is supplied in a RoHS-compliant 2 × 2 mm MCLP package requiring external biasing and impedance matching. It is rated for maximum drain-source voltage of 5 V, maximum drain-source current of 65 mA, and maximum short-term (5 min. or less) input power of +18 dBm. It is designed for operating temperatures from -40 to +85°C.

MINI-CIRCUITS, P.O. Box 350166, Brooklyn, NY 11235-0003; (718) 934-4500,


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